Icom IC-7300 PA final

PA Final IC-7300 HF/UHF

RD100HHF-1C 225 AH-G5 Mitsubishi Silicon MOSFET Power Transistor 100 W HF 50 Mhz

The RD100HHF-1C 225 AH-G5 is a Mitsubishi silicon MOSFET power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF and UHF frequency ranges, with a frequency range of HF and 50 MHz, respectively.

The transistor is designed to operate with a maximum collector-emitter voltage (Vce) of 12.5 volts and a maximum collector current (Ic) of 12 amps. It is capable of delivering up to 100 watts of power output at a frequency of 30 MHz, and up to 100 watts at a frequency of 50 MHz.

The RD100HHF-1C  225AH-G5 transistor uses a metal oxide semiconductor field-effect transistor (MOSFET) technology to amplify and control the flow of electrical signals. It is designed to operate in a Class AB mode, which means it provides high efficiency while maintaining low distortion.

The transistor also features a built-in matching circuit, which simplifies the design process and reduces the number of external components required for its operation. Additionally, it is designed with a ceramic package, which provides high reliability and stability over a wide temperature range.

The RD100HHF-1C 225AH-G5 transistor is a high-performance and reliable component that offers excellent performance in a wide range of HF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.

RD100 HHF-1C 225AH-G5 is a MOS FET type transistor specifically designed for HF High power amplifiers applications 

High power and High Gain:
Pout>100W, Gp>10.6dB @Vds=12.5V,f=30MHz
Pout>100W, Gp>10.6dB @Vds=12.5V,f=50MHz
Integrated gate protection diode

RoHS Compliant

MFR: Mitsubishi

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